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Nature:石墨烯生成的简单新法

来源:Nature 2010-11-25 17:42

过去几年人们对石墨烯(具有新颖电子性质的碳单层)非常感兴趣。试图生成单层(或少数几层)石墨烯大型层状结构的工作可能会从一个简单的新方法得到帮助。仅仅通过在800 oC这样一个相对较低的温度下对沉积在一种金属催化剂基质上的各种不同固态碳源进行烘焙,就有可能一步生成纯净的石墨烯或掺杂的石墨烯。适合的起始材料包括聚合物薄膜和各种各样的小分子。(生 物 谷Bioon.com)

生 物 谷推荐英文摘要:

Nature  doi:10.1038/nature09579

Growth of graphene from solid carbon sources
Zhengzong Sun,Zheng Yan,Jun Yao,Elvira Beitler,Yu Zhu& James M. Tourtour@rice.edu

Monolayer graphene was first obtained1 as a transferable material in 2004 and has stimulated intense activity among physicists, chemists and material scientists1, 2, 3, 4. Much research has been focused on developing routes for obtaining large sheets of monolayer or bilayer graphene. This has been recently achieved by chemical vapour deposition (CVD) of CH4 or C2H2 gases on copper or nickel substrates5, 6, 7. But CVD is limited to the use of gaseous raw materials, making it difficult to apply the technology to a wider variety of potential feedstocks. Here we demonstrate that large area, high-quality graphene with controllable thickness can be grown from different solid carbon sources—such as polymer films or small molecules—deposited on a metal catalyst substrate at temperatures as low as 800?°C. Both pristine graphene and doped graphene were grown with this one-step process using the same experimental set-up.

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